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M40Z300 M40Z300W
5V or 3V NVRAM Supervisor for Up to 8 LPSRAMs
FEATURES SUMMARY

CONVERTS LOW POWER SRAM INTO NVRAMs PRECISION POWER MONITORING AND POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE TWO-INPUT DECODER ALLOWS CONTROL FOR UP TO 8 SRAMs (with 2 devices active in parallel) CHOICE OF SUPPLY VOLTAGES AND POWER-FAIL DESELECT VOLTAGES: - M40Z300: VCC = 4.5V to 5.5V THS = VSS: 4.5V VPFD 4.75V THS = VOUT: 4.2V VPFD 4.5V - M40Z300W: VCC = 3.0V to 3.6V THS = VSS: 2.8V VPFD 3.0V VCC = 2.7V to 3.3V THS = VOUT: 2.5 VPFD 2.7V RESET OUTPUT (RST) FOR POWER ON RESET BATTERY LOW PIN (BL) LESS THAN 12ns CHIP ENABLE ACCESS PROPAGATION DELAY (for 5.0V device) PACKAGING INCLUDES A 28-LEAD SOIC AND SNAPHAT(R) TOP (to be ordered separately), OR A 16-LEAD SOIC SOIC PACKAGE PROVIDES DIRECT CONNECTION FOR A SNAPHAT TOP WHICH CONTAINS THE BATTERY
Figure 1. 16-pin SOIC Package
16 1
SO16 (MQ)
Figure 2. 28-pin SOIC Package
SNAPHAT (SH) Crystal/Battery
28 1
SOH28 (MH)
February 2005
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M40Z300, M40Z300W
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. 16-pin SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 2. 28-pin SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Figure 3. Table 1. Figure 4. Figure 5. Figure 6. Figure 7. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28-pin SOIC Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M40Z300 16-pin SOIC Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M40Z300W 16-pin SOIC Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Hardware Hookup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .....4 .....4 .....5 .....5 .....5 .....6
OPERATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Two to Four Decode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 2. Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 8. Address-Decode Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Data Retention Lifetime Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Power-on Reset Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Battery Low Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 VCC Noise And Negative Going Transients. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Figure 9. Supply Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 3. Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 DC AND AC PARAMETERS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 4. DC and AC Measurement Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 10.AC Testing Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 5. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Table 6. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 11.Power Down Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Figure 12.Power Up Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 7. Power Down/Up Mode AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PACKAGE MECHANICAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Figure 13.SOH28 - 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Package Outline. 15 Table 8. SOH28 - 28-lead Plastic Small Outline, battery SNAPHAT, Package Mechanical Data 15 Figure 14.SH - 4-pin SNAPHAT Housing for 48mAh Battery, Package Outline . . . . . . . . . . . . . . . 16 Table 9. SH - 4-pin SNAPHAT Housing for 48mAh Battery, Package Mechanical Data . . . . . . . 16 Figure 15.SH - 4-pin SNAPHAT Housing for 120mAh Battery, Package Outline . . . . . . . . . . . . . . 17 Table 10. SH - 4-pin SNAPHAT Housing for 120mAh Battery, Package Mechanical Data . . . . . . 17 Figure 16.SO16 - 16-lead Plastic Small Outline, 150 mils body width, Package Outline . . . . . . . . 18 Table 11. SO16 - 16-lead Plastic Small Outline, 150 mils body width, Package Mechanical Data 18
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M40Z300, M40Z300W
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 12. Ordering Information Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Table 13. SNAPHAT(R) Battery Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Table 14. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
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M40Z300, M40Z300W
DESCRIPTION
The M40Z300/W NVRAM SUPERVISOR is a selfcontained device which converts a standard lowpower SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCC input for an out-of-tolerance condition. When an invalid VCC condition occurs, the conditioned chip enable outputs (E1CON to E4CON) are forced inactive to write-protect the stored data in the SRAM. During a power failure, the SRAM is switched from the VCC pin to the lithium cell within the SNAPHAT(R) to provide the energy required for data retention. On a subsequent power-up, the SRAM remains write protected until a valid power condition returns. The 28-pin, 330mil SOIC provides sockets with gold plated contacts for direct connection to a separate SNAPHAT housing containing the battery. The SNAPHAT housing has gold plated pins which mate with the sockets, ensuring reliable connection. The housing is keyed to prevent improper insertion. This unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process which greatly reduces the board manufacturing process complexity of either directly soldering or inserting a battery into a soldered holder. Providing non-volatility becomes a "SNAP." The 16-pin SOIC provides battery pins for an external user-supplied battery. Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is also keyed to prevent reverse insertion. The 28-pin SOIC and battery packages are shipped separately in plastic anti-static tubes or in Tape & Reel form. For the 28-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part number is "M4ZXX-BR00SH" (see Table 13., page 19). Caution: Do not place the SNAPHAT battery top in conductive foam, as this will drain the lithium button-cell battery.
Figure 3. Logic Diagram
VCC B +(1)
Table 1. Signal Names
THS E Threshold Select Input Chip Enable Input Conditioned Chip Enable Output Decoder Inputs Reset Output (Open Drain) Battery Low Output (Open Drain) Supply Voltage Output Supply Voltage Ground Positive Battery Pin Negative Battery Pin Not Connected Internally
THS E B A M40Z300 M40Z300W
VOUT BL E1CON E2CON E3CON E4CON RST
E1CON - E4CON A, B RST BL VOUT VCC VSS B+
VSS
B -(1)
AI02242
B- NC
Note: 1. For 16-pin SOIC package only.
Note: For M40Z300W, B- must be connected to the negative battery terminal only (not to Pin 8, VSS).
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M40Z300, M40Z300W
Figure 4. 28-pin SOIC Connections
VOUT NC NC RST NC A NC B NC BL NC NC THS VSS 28 1 2 27 3 26 4 25 5 24 6 23 7 M40Z300 22 8 M40Z300W 21 9 20 10 19 11 18 12 17 13 16 14 15
AI02243
Figure 6. M40Z300W 16-pin SOIC Connections
VCC E NC NC NC E1CON E2CON NC E3CON NC NC NC E4CON NC
VOUT NC RST A B BL THS VSS
16 1 2 15 3 14 4 13 M40Z300W 5 12 6 11 7 10 8 9
VCC B- E E1CON E2CON E3CON E4CON B+
AI06350
Figure 5. M40Z300 16-pin SOIC Connections
Note: For M40Z300W, B- must be connected to the negative battery terminal only (not to Pin 8, VSS).
VOUT NC RST A B BL THS VSS
1 2 3 4 5 6 7 8
16 15 14 13 M40Z300 12 11 10 9
VCC B+ E E1CON E2CON E3CON E4CON B-
AI03624
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M40Z300, M40Z300W
Figure 7. Hardware Hookup
3.0V, 3.3V or 5V
VCC
VOUT VCC E2(1) VCC E2(1) CMOS SRAM
0.1F 0.1F
0.1F
VCC E2(1) CMOS SRAM
0.1F
VCC E2(1) CMOS SRAM E
M40Z300 M40Z300W
0.1F
CMOS SRAM E
E
E
A B E Threshold THS VSS
E1CON E2CON E3CON E4CON RST BL To Microprocessor To Battery Monitor Circuit
AI02395
Note: 1. If the second chip enable pin (E2) is unused, it should be tied to VOUT.
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M40Z300, M40Z300W
OPERATION
The M40Z300/W, as shown in Figure 7., page 6, can control up to four (eight, if placed in parallel) standard low-power SRAMs. These SRAMs must be configured to have the chip enable input disable all other input signals. Most slow, low-power SRAMs are configured like this, however many fast SRAMs are not. During normal operating conditions, the conditioned chip enable (E1CON to E4CON) output pins follow the chip enable (E) input pin with timing shown in Figure 8., page 8 and Table 7., page 14. An internal switch connects VCC to VOUT. This switch has a voltage drop of less than 0.3V (IOUT1). When VCC degrades during a power failure, E1CON to E4CON are forced inactive independent of E. In this situation, the SRAM is unconditionally write protected as VCC falls below an out-of-tolerance threshold (VPFD). For the M40Z300 the power fail detection value associated with VPFD is selected by the Threshold Select (THS) pin and is shown in Table 6., page 12. For the M40Z300W, the THS pin selects both the supply voltage and VPFD (also shown in Table 6., page 12). Note: In either case, THS pin must be connected to either VSS or VOUT. If chip enable access is in progress during a power fail detection, that memory cycle continues to completion before the memory is write protected. If the memory cycle is not terminated within time tWPT, Table 2. Truth Table
Inputs E H L L L L B X L L H H A X L H L H E1CON H L H H H E2CON H H L H H Outputs E3CON H H H L H E4CON H H H H L
E1CON to E4CON are unconditionally driven high, write protecting the SRAM. A power failure during a WRITE cycle may corrupt data at the currently addressed location, but does not jeopardize the rest of the SRAM's contents. At voltages below VPFD (min), the user can be assured the memory will be write protected within the Write Protect Time (tWPT) provided the VCC fall time exceeds tF (see Figure 8., page 8). As VCC continues to degrade, the internal switch disconnects VCC and connects the internal battery to VOUT. This occurs at the switchover voltage (VSO). Below the VSO, the battery provides a voltage VOHB to the SRAM and can supply current IOUT2 (see Table 6., page 12). When VCC rises above VSO, VOUT is switched back to the supply voltage. Outputs E1CON to E4CON are held inactive for tCER (120ms maximum) after the power supply has reached VPFD, independent of the E input, to allow for processor stabilization (see Figure 12., page 13). Two to Four Decode The M40Z300/W includes a 2 input (A, B) decoder which allows the control of up to 4 independent SRAMs. The Truth Table for these inputs is shown in Table 2.
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M40Z300, M40Z300W
Figure 8. Address-Decode Time
A, B tAS
E tEDL E1CON - E4CON
AI02551
tEDH
Note: During system design, compliance with the SRAM timing parameters must comprehend the propagation delay between E1CON E4CON.
Data Retention Lifetime Calculation Most low power SRAMs on the market today can be used with the M40Z300/W NVRAM SUPERVISOR. There are, however some criteria which should be used in making the final choice of which SRAM to use. The SRAM must be designed in a way where the chip enable input disables all other inputs to the SRAM. This allows inputs to the M40Z300/W and SRAMs to be "Don't Care" once VCC falls below VPFD(min). The SRAM should also guarantee data retention down to VCC = 2.0V. The chip enable access time must be sufficient to meet the system needs with the chip enable propagation delays included. If the SRAM includes a second chip enable pin (E2), this pin should be tied to VOUT. If data retention lifetime is a critical parameter for the system, it is important to review the data retention current specifications for the particular SRAMs being evaluated. Most SRAMs specify a data retention current at 3.0V. Manufacturers generally specify a typical condition for room temperature along with a worst case condition (generally at elevated temperatures). The system level requirements will determine the choice of which value to use. The data retention current value of the SRAMs can then be added to the IBAT value of the M40Z300/ W to determine the total current requirements for data retention. The available battery capacity for the SNAPHAT(R) of your choice can then be divided by this current to determine the amount of data retention available (see Table 13., page 19). CAUTION: Take care to avoid inadvertent discharge through VOUT and E1CON - E4CON after battery has been attached. For a further more detailed review of lifetime calculations, please see Application Note AN1012.
Power-on Reset Output All microprocessors have a reset input which forces them to a known state when starting. The M40Z300/W has a reset output (RST) pin which is guaranteed to be low within tWPT of VPFD (see 7). This signal is an open drain configuration. An appropriate pull-up resistor should be chosen to control the rise time. This signal will be valid for all voltage conditions, even when VCC equals VSS. Once VCC exceeds the power failure detect voltage VPFD, an internal timer keeps RST low for tREC to allow the power supply to stabilize. Battery Low Pin The M40Z300/W automatically performs battery voltage monitoring upon power-up, and at factoryprogrammed time intervals of at least 24 hours. The Battery Low (BL) pin will be asserted if the battery voltage is found to be less than approximately 2.5V. The BL pin will remain asserted until completion of battery replacement and subsequent battery low monitoring tests, either during the next power-up sequence or the next scheduled 24-hour interval. If a battery low is generated during a power-up sequence, this indicates that the battery is below 2.5V and may not be able to maintain data integrity in the SRAM. Data should be considered suspect, and verified as correct. A fresh battery should be installed. If a battery low indication is generated during the 24-hour interval check, this indicates that the battery is near end of life. However, data is not compromised due to the fact that a nominal VCC is supplied. In order to insure data integrity during subsequent periods of battery back-up mode, the battery should be replaced. The SNAPHAT(R) top should be replaced with valid VCC applied to the device.
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M40Z300, M40Z300W
The M40Z300/W only monitors the battery when a nominal VCC is applied to the device. Thus applications which require extensive durations in the battery back-up mode should be powered-up periodically (at least once every few months) in order for this technique to be beneficial. Additionally, if a battery low is indicated, data integrity should be verified upon power-up via a checksum or other technique. The BL pin is an open drain output and an appropriate pull-up resistor to VCC should be chosen to control the rise time. VCC Noise And Negative Going Transients ICC transients, including those produced by output switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1F (as shown in Figure 9.) is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recommends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount. Figure 9. Supply Voltage Protection
VCC VCC
0.1F
DEVICE
VSS
AI00622
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M40Z300, M40Z300W
MAXIMUM RATING
Stressing the device above the rating listed in the "Absolute Maximum Ratings" table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is Table 3. Absolute Maximum Ratings
Symbol TA Parameter Grade 1 Ambient Operating Temperature Grade 6 Storage Temperature Lead Solder Temperature for 10 seconds Input or Output Voltage M40Z300 Supply Voltage M40Z300W Output Current Power Dissipation -0.3 to 4.6 20 1 V mA W SNAPHAT(R) SOIC TSLD(1,2) VIO VCC IO PD -40 to 85 -40 to 85 -55 to 125 260 -0.3 to VCC + 0.3 -0.3 to 7.0 C C C C V V Value 0 to 70 Unit C
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
TSTG
Note: 1. For SO package, standard (SnPb) lead finish: Reflow at peak temperature of 225C (total thermal budget not to exceed 180C for between 90 to 150 seconds). 2. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260C (total thermal budget not to exceed 245C for greater than 30 seconds).
CAUTION: Negative undershoots below -0.3V are not allowed on any pin while in the Battery Back-up mode. CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
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M40Z300, M40Z300W
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, as well as the DC and AC characteristics of the device. The parameters in the following DC and AC Characteristic tables are derived from tests performed under the MeasureTable 4. DC and AC Measurement Conditions
Parameter VCC Supply Voltage Grade 1 Ambient Operating Temperature Grade 6 Load Capacitance (CL) Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages
Note: Output High Z is defined as the point where data is no longer driven.
ment Conditions listed in the relevant tables. Designers should check that the operating conditions in their projects match the measurement conditions when using the quoted parameters.
M40Z300 4.5 to 5.5V 0 to 70C -40 to 85C 100pF 5ns 0 to 3V 1.5V
M40Z300W 2.7 to 3.6V 0 to 70C -40 to 85C 50pF 5ns 0 to 3V 1.5V
Figure 10. AC Testing Load Circuit
DEVICE UNDER TEST
333
CL = 100pF or 50pF
1.73V
CL includes JIG capacitance
AI02393
Note: 50pF for M40Z300W.
Table 5. Capacitance
Symbol CIN COUT(3) Parameter(1,2) Input Capacitance Input/Output Capacitance Min Max 8 10 Unit pF pF
Note: 1. Sampled only, not 100% tested. 2. At 25C, f = 1MHz. 3. Outputs deselected.
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M40Z300, M40Z300W
Table 6. DC Characteristics
Sym ILI(2) ICC VIL VIH Parameter Input Leakage Current Supply Current Input Low Voltage Input High Voltage Output Low Voltage VOL Output Low Voltage (open drain)(3) Output High Voltage VOH Battery Back-up(4) VOUT Current (Active) VOUT Current (Battery Back-up) Data Retention Mode Current(5) Threshold Select Voltage Power-fail Deselect Voltage (THS = VSS) Power-fail Deselect Voltage (THS = VOUT) Battery Back-up Switchover Voltage Battery Voltage 2.0 VSS 4.5 4.2 4.6 4.35 3.0 2.9 3.6 2.0 IOL = 4.0mA IOL = 10mA IOH = -2.0mA IOUT2 = -1.0A VOUT > VCC -0.3 VOUT > VCC -0.2 VOUT > VBAT -0.3 100 100 VOUT 4.75 4.5 VSS 2.8 2.5 2.9 2.6 2.5 2.9 3.6 2.4 2.0 2.9 3.6 250 150 100 100 VOUT 3.0 2.7 Test Condition(1) 0V VIN VCC Outputs open -0.3 2.2 3 M40Z300 Min Typ Max 1 6 0.8 VCC + 0.3 0.4 0.4 2.4 2.0 2.9 3.6 150 100 -0.3 2.0 2 Min M40Z300W Unit Typ Max 1 4 0.8 VCC + 0.3 0.4 0.4 A mA V V V V V V mA mA A nA V V V V V
VOH VOHB IOUT1
IOUT2 ICCDR THS
VPFD
VSO VBAT
Note: 1. 2. 3. 4.
Valid for Ambient Operating Temperature: TA = 0 to 70C or -40 to 85C; VCC = 2.7 to 3.6V or 4.5 to 5.5V(except where noted). Outputs deselected. For RST & BL pins (Open Drain). Chip Enable outputs (E1CON - E4CON) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage currents will reduce battery life. 5. Measured with VOUT and E1CON - E4CON open.
12/21
M40Z300, M40Z300W
Figure 11. Power Down Timing
VCC VPFD (max) VPFD VPFD (min) VSO
tF tFB
E tWPT VOHB E1CON-E4CON
RST
AI02398B
Figure 12. Power Up Timing
VCC VPFD (max) VPFD VPFD (min) VSO
tR tRB E tEDH E1CON-E4CON VOHB tREC RST
AI02399B
tCER
tEDL
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M40Z300, M40Z300W
Table 7. Power Down/Up Mode AC Characteristics
Symbol tF(2) tFB(3) tR tEDL Parameter(1) VPFD (max) to VPFD (min) VCC Fall Time VPFD (min) to VSS VCC Fall Time VPFD(min) to VPFD (max) VCC Rise Time M40Z300 Chip Enable Propagation Delay Low M40Z300W M40Z300 tEDH tAS tCER tREC(4) tWPT tRB Chip Enable Propagation Delay High M40Z300W A, B set up to E Chip Enable Recovery VPFD (max) to RST High M40Z300 Write Protect Time M40Z300W VSS to VPFD (min) VCC Rise Time 40 1 250 s s 0 40 40 40 120 120 150 20 ns ns ms ms s 20 10 ns ns M40Z300 M40Z300W Min 300 10 150 10 12 Max Unit s s s s ns
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70C or -40 to 85C; VCC = 2.7 to 3.6V or 4.5 to 5.5V(except where noted). 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 s after VCC passes VPFD (min). 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. 4. tREC (min) = 20ms for industrial temperature Grade 6 device.
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M40Z300, M40Z300W
PACKAGE MECHANICAL INFORMATION
Figure 13. SOH28 - 28-lead Plastic Small Outline, 4-socket battery SNAPHAT, Package Outline
A2 B e
A C eB CP
D
N
E
H A1 L
1 SOH-A
Note: Drawing is not to scale.
Table 8. SOH28 - 28-lead Plastic Small Outline, battery SNAPHAT, Package Mechanical Data
mm Symbol Typ A A1 A2 B C D E e eB H L N CP 1.27 0.05 2.34 0.36 0.15 17.71 8.23 - 3.20 11.51 0.41 0 28 0.10 Min Max 3.05 0.36 2.69 0.51 0.32 18.49 8.89 - 3.61 12.70 1.27 8 0.050 0.002 0.092 0.014 0.006 0.697 0.324 - 0.126 0.453 0.016 0 28 0.004 Typ Min Max 0.120 0.014 0.106 0.020 0.012 0.728 0.350 - 0.142 0.500 0.050 8 inches
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M40Z300, M40Z300W
Figure 14. SH - 4-pin SNAPHAT Housing for 48mAh Battery, Package Outline
A1
A2 A A3
eA D
B eB
L
E
SHZP-A
Note: Drawing is not to scale.
Table 9. SH - 4-pin SNAPHAT Housing for 48mAh Battery, Package Mechanical Data
mm Symbol Typ A A1 A2 A3 B D E eA eB L 0.46 21.21 14.22 15.55 3.20 2.03 6.73 6.48 Min Max 9.78 7.24 6.99 0.38 0.56 21.84 14.99 15.95 3.61 2.29 0.018 0.835 0.560 0.612 0.126 0.080 0.265 0.255 Typ Min Max 0.385 0.285 0.275 0.015 0.022 0.860 0.590 0.628 0.142 0.090 inches
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Figure 15. SH - 4-pin SNAPHAT Housing for 120mAh Battery, Package Outline
A1
A2 A A3
eA D
B eB
L
E
SHZP-A
Note: Drawing is not to scale.
Table 10. SH - 4-pin SNAPHAT Housing for 120mAh Battery, Package Mechanical Data
mm Symbol Typ A A1 A2 A3 B D E eA eB L 0.46 21.21 17.27 15.55 3.20 2.03 8.00 7.24 Min Max 10.54 8.51 8.00 0.38 0.56 21.84 18.03 15.95 3.61 2.29 0.018 0.835 0.680 0.612 0.126 0.080 0.315 0.285 Typ Min Max 0.415 .0335 0.315 0.015 0.022 0.860 0.710 0.628 0.142 0.090 inches
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M40Z300, M40Z300W
Figure 16. SO16 - 16-lead Plastic Small Outline, 150 mils body width, Package Outline
A2 B e D
A C CP
N
E
1
H A1 L
SO-b
Note: Drawing is not to scale.
Table 11. SO16 - 16-lead Plastic Small Outline, 150 mils body width, Package Mechanical Data
mm Symbol Typ. A A1 A2 B C D E e H L N CP 1.27 0.35 0.19 9.80 3.80 - 5.80 0.40 0 16 0.10 0.10 Min. Max. 1.75 0.25 1.60 0.46 0.25 10.00 4.00 - 6.20 1.27 8 0.050 0.014 0.007 0.386 0.150 - 0.228 0.016 0 16 0.004 0.004 Typ. Min. Max. 0.069 0.010 0.063 0.018 0.010 0.394 0.158 - 0.244 0.050 8 inches
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M40Z300, M40Z300W
PART NUMBERING
Table 12. Ordering Information Example
Example: M40Z 300W MH 1 TR
Device Type M40Z
Supply and Write Protect Voltage 300 = VCC = 4.5 to 5.5V THS = VSS = 4.5V VPFD 4.75V THS = VOUT = 4.2V VPFD 4.5V 300W = VCC = 3.0 to 3.6V THS = VSS = 2.8V VPFD 3.0V VCC = 2.7V to 3.3V THS = VOUT = 2.5V VPFD 2.7V
Package MH (1) = SOH28 MQ = SO16
Temperature Range 1 = 0 to 70C 6 = -40 to 85C
Shipping Method for SOIC blank = Tubes TR = Tape & Reel
Note: 1. The SOIC package (SOH28) requires the battery package (SNAPHAT(R)) which is ordered separately under the part number "M4Zxx-BR00SH" in plastic tube or "M4Zxx-BR00SHTR" in Tape & Reel form. Caution: Do not place the SNAPHAT battery package "M4Zxx-BR00SH" in conductive foam as it will drain the lithium button-cell battery.
For other options, or for more information on any aspect of this device, please contact the ST Sales Office nearest you. Table 13. SNAPHAT(R) Battery Table
Part Number M4Z28-BR00SH M4Z32-BR00SH Description Lithium Battery (48mAh) SNAPHAT Lithium Battery (120mAh) SNAPHAT Package SH SH
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M40Z300, M40Z300W
REVISION HISTORY
Table 14. Document Revision History
Date March 1999 08-Mar-00 22-Sep-00 23-Feb-01 30-May-01 10-Jul-01 01-Aug-01 15-Jan-02 13-May-02 31-Oct-03 04-Nov-03 23-Feb-05 Version 1.0 1.1 1.2 1.3 1.4 2.0 2.1 2.2 2.3 2.4 2.5 3.0 First Issue Document Layout changed; SO16 package added; Battery Capacity changed (Table 13) SO16 package measures change Added information for Industrial Temperature (Table 3, 7, 12) Change "Controller" references to "SUPERVISOR" Reformatted; added temp/voltage info. to tables (Table 6, 7); Figures changed (Figures 3, 5, 7, 10, 8) E2 connections added to Hookup (Figure 7) 16-pin SOIC Connections split, graphic added (Figure 6); addition to hardware hookup (Figure 7) Modify reflow time and temperature footnote (Table 3) Update DC Characteristics (Table 6) Correct DC Characteristics (Table 6) Reformatted; IR reflow, SO package updates (Table 3) Revision Details
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M40Z300, M40Z300W
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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